Nanoscale NMOS Device Model Analysis and its Characteristics Academic Article uri icon

abstract

  • AbstractA 90 nm NMOS MOSFET model is simulated using Silvaco Visual T‐CAD simulator. The materials used to simulate NMOS MOSFET are Al, Si, NpolySi, and SiO2. To overcome the problem of short circuits, lightly‐doped drain (LDD) implantation is applied in NMOS model. The analysis of the model is determined with T‐CAD simulator and obtained threshold voltage (Vth) 2.568 V, while keeping oxide thickness (Tox) 2.373 nm and gate length 0.09 µm. The obtained result is compared with standard ITRS road map and gets almost similar results.

authors

  • Singh, Palvinder
  • Sachdeva, Amit
  • Singh, Shruti
  • Yahya, Muhd ZuAzhan
  • Rahman, Nor Mas Mira Abd
  • Pal, Rishi

publication date

  • 2025

volume

  • 414

issue

  • 1