Influence of Si‐doping on the characteristics of InGaGdN/GaN MQWs grown by MBE Academic Article uri icon

abstract

  • AbstractWe report the investigation on the effects of Si‐doping in the GaN barrier layers of InGaGdN/GaN multiple‐quantum wells (MQWs) prepared by the molecular‐beam epitaxy. X‐ray diffraction results exhibit improved crystal and interfacial qualities for the Si‐doped barrier samples as compared to the undoped barrier sample. The magnetic properties measured with the superconducting quantum interference device magnetometer indicate clear hysteresis and enhanced saturation magnetization with the increase of Si cell temperature for all the Si‐doped barrier MQW samples. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

authors

  • Mohd Tawil, Siti Nooraya
  • Krishnamurthy, Daivasigamani
  • Kakimi, Rina
  • Ishimaru, Manabu
  • Emura, Shuichi
  • Hasegawa, Shigehiko
  • Asahi, Hajime

publication date

  • 2011

number of pages

  • 2

start page

  • 491

end page

  • 493

volume

  • 8

issue

  • 2