Structural and magnetic properties of diluted magnetic semiconductor GaGdN nanorods Academic Article uri icon

abstract

  • AbstractDiluted magnetic semiconductor GaGdN nanorods were grown on Si (001) substrates with native silicon oxides by molecular‐beam epitaxy with radio frequency nitrogen plasma. The Gd cell temperature dependences of their structural and magnetic properties were systematically studied. It was found that higher Gd fluxes suppress the growth of nanorods along the c‐direction and form GdN secondary phase. Magnetic measurement also revealed that nanorods of high content Gd showed small magnetization, indicating that GdN come to form and therefore the amount of Gd atoms substituted for Ga sites in GaGdN decreases. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

publication date

  • 2011

number of pages

  • 2

start page

  • 494

end page

  • 496

volume

  • 8

issue

  • 2