Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN structures

AbstractThe structural characteristics of Gd doped InGaN structures grown by radio frequency plasma assisted MBE are analysed using high resolution x‐ray diffraction and reciprocal space maps (RSMs). The symmetric (002) RSMs of the InGaGdN thin films, InGaGdN/GaN and InGaN/GaGdN superlattice (SL) structures confirmed the absence of any tilt between the GaN buffer and the thin films or SL structures. The asymmetric RSMs of InGaGdN thin films showed double reciprocal lattice points (RLPs). The asymmetric RSMs of both types of superlattice structures indicated the presence of partial relaxation. The degree of partial relaxation increased with the Gd concentration for a fixed In composition. The InGaN/GaGdN SLs showed better crystallinity. Under optimized conditions, almost coherent growth of InGaN/GaGdN SLs could be achieved as confirmed by the nearly aligned RLPs in their asymmetric RSMs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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