Unveiling the Influence of Aluminium Incorporation on the Structural, Optical, and Magnetic Characteristics of Gd-Doped ZnO Academic Article uri icon

abstract

  • Zinc oxide (ZnO) thin films are widely used in various technological applications due to their excellent physical and chemical properties. However, enhancing these properties for better performance remains a challenge. This study explores the enhancement of ZnO thin films through co-doping with Gd (3 at%) and Al (3 at%), using a co-sputtering method. X-ray diffraction (XRD) analysis revealed the effective incorporation of both Gd and Al into the ZnO lattice, as evidenced by the absence of secondary phases or peaks associated with the dopants. Energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Gd and Al ions within the films, achieving 3 at% concentration for each respective element. Surface morphology analysis showed that the addition of Gd and Al resulted in homogeneously distributed nanoparticles with reduced particle size in the co-doped films. Optical measurements using UV-Vis spectroscopy showed good transmittance, surpassing 90 % of the average transmittance for all the films. The bandgap obtained using Tauc’s plot equation based on the transmittance results was increased when both Gd and Al were incorporated. Magnetic force microscopy (MFM) results revealed enhanced magnetic properties, with a distinctive bright-dark contrast and higher δfrms values in the co-doped films compared to undoped ZnO. These findings suggest that co-doping with Gd and Al effectively improves the physical, optical, and magnetic properties of ZnO thin films, offering potential for spintronic applications at room temperature.

publication date

  • 2025

number of pages

  • 11

start page

  • 11

end page

  • 22

volume

  • 32

issue

  • 1